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Applied Physics Letters

Volumn 97, Issue 22, 2010, Pages

Field-induced strain degradation of AlGaN/GaN high electron mobility transistors on a nanometer scale

(5) Lin, Chung Han a Doutt, D R b Mishra, U K c Merz, T A b Brillson, L J a,b

a The Ohio State University (United States)

b OHIO STATE UNIVERSITY (United States)

c UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN LAYERS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CATHODOLUMINESCENCE SPECTROSCOPY; CRYSTAL DEFORMATION; DEFECT FORMATION; DEPTH-RESOLVED; ELECTRICAL STRESS; ELECTRONIC DEFECTS; FIELD-INDUCED STRAIN; GATE-DRAIN VOLTAGES; HIGH ELECTRON MOBILITY; INDUCED STRESS; KELVIN PROBE FORCE MICROSCOPY; MICRON SCALE; NANO SCALE; NANO-METER SCALE; ORDERS-OF-MAGNITUDE; THRESHOLD GATES; TRANSISTOR DEGRADATION;

DEFECTS; DEGRADATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; FERMI LEVEL; GALLIUM NITRIDE; RESONANT TUNNELING; THRESHOLD LOGIC; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 78650647779 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3521392 Document Type: Article

Times cited : (9)

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