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Applied Physics Letters

Volumn 96, Issue 26, 2010, Pages

Correlation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors

(6) Meneghesso, G a Rossi, F b Salviati, G b Uren, M J c Muoz, E d Zanoni, E a

a UNIVERSITY OF PADOVA (Italy)

b IMEM CNR (Italy)

c QINETIQ (United Kingdom)

d UNIVERSIDAD POLITÉCNICA DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CATHODOLUMINESCENCE SPECTRA; DEEP LEVEL; DEVICE WAFERS; FABRICATION PROCESS; GAN BUFFER LAYERS; GROWTH SUBSTRATES; YELLOW LUMINESCENCE;

CATHODOLUMINESCENCE; CRYSTAL GROWTH; CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77954317735 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3459968 Document Type: Article

Times cited : (42)

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