Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors

Applied Physics Letters

Volumn 96, Issue 5, 2010, Pages

  Puzyrev, Y S ^a   Tuttle, B R ^a,b   Schrimpf, R D ^c   Fleetwood, D M ^a,c   Pantelides, S T ^a,c,d  

^a VANDERBILT UNIVERSITY   (United States)

^b BEHREND COLLEGE   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY-FUNCTIONAL CALCULATIONS; FIRST-PRINCIPLES; HYDROGEN RELEASE; PHYSICAL MECHANISM; STRESS CONDITION; YELLOW LUMINESCENCE;

CARRIER MOBILITY; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; HOT ELECTRONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 76449115448     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3293008     Document Type: Article

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