Analysis of surface charging effects in passivated AlGaN-GaN FETs using a MOS test electrode

IEEE Electron Device Letters

Volumn 25, Issue 5, 2004, Pages 256-258

  Neuburger, M ^a   Allgaier, J ^a   Zimmermann, T ^a   Daumiller, I ^b   Kunze, M ^b   Birkhahn, R ^c   Gotthold, D W ^c   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

^b MicroGaN GmbH   (Germany)

^c EMCORE CORPORATION   (United States)

Author keywords

GaN; Passivation; SiN

Indexed keywords

ELECTRODES; GALLIUM NITRIDE; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON NITRIDE;

CHARGE CENTROID; SURFACE CHARGING EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 2442480719     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.827283     Document Type: Letter

References (10)

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