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Volumn 50, Issue 2, 2011, Pages

Capacitance-voltage characteristics of Al2O3/AlGaN/ GaN structures and state density distribution at Al2O 3/AlGaN interface

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN; C-V CHARACTERISTIC; C-V CURVE; CAPACITANCE VOLTAGE CHARACTERISTIC; CAPACITANCE VOLTAGE MEASUREMENTS; CONDUCTION BAND EDGE; ELECTRON ACCUMULATION; FIXED CHARGES; FORWARD BIAS; HYSTERESIS VOLTAGE; INTERFACE STATE; INTERFACE STATE DENSITY; MINIMUM DENSITY; PHOTO-INDUCED VOLTAGE; REVERSE BIAS; STATE DENSITIES;

EID: 79951884304     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.021001     Document Type: Article
Times cited : (274)

References (33)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.