380V/1.9A GaN power-HEMT: Current collapse phenomena under high applied voltage and demonstration of 27.1 MHz class-E amplifier

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 586-589

  Saito, Wataru ^a   Kuraguchi, Masahiko ^a   Takada, Yoshiharu ^a   Tsuda, Kunio ^a   Domon, Tomokazu ^a   Omura, Ichiro ^a   Yamaguchi, Masakazu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; POWER AMPLIFIERS; POWER ELECTRONICS; SWITCHING FREQUENCY;

CONDUCTION LOSS; CURRENT COLLAPSE; POWER EFFICIENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33847715866     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. N. -Q. Zhang et al.: IEDM'01 Tech. Digest, pp. 589-592, 2001.
2. W. Saito et al.: IEDM'03 Tech. Digest, pp., 2003.
3. M. Hikita et al.: IEDM'04 Technical Digest, pp. 803-806, 2004.
4. S. Iwakami et al.: Jpn. J. of Appl. Phys. vol. 43, pp. L831-833, 2004.
5. N. Zhang et al.: Proc. of PESC'03, pp.233-237, 2003.
6. S. Yoshida et al.: Solid State Elec., vol. 47, pp.589-592, 2003.
7. Y. Ando et.al; IEEE Electron Device Lett., vol.24, pp.289-291, 2003.
8. M. Kuraguchi et al.: Phys. stat. sol. (c) 2, pp. 2674-2650, 2005.