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Applied Physics Letters

Volumn 72, Issue 21, 1998, Pages 2745-2747

Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures

(5) Dang, X Z a Wang, C D a Yu, E T a Boutros, K S b Redwing, J M b

a UNIVERSITY OF CALIFORNIA (United States)

b Epitronics/ATMI (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000716542 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.121077 Document Type: Article

Times cited : (83)

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