Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC

Microelectronics Reliability

Volumn 47, Issue 9-11 SPEC. ISS., 2007, Pages 1630-1633

  Bouya, M ^a,b   Carisetti, D ^b   Malbert, N ^a   Labat, N ^a   Perdu, P ^d   Clement J C ^b   Bonnet, M ^c   Pataut, G ^c  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b TRT France LATPI   (France)

^c United Monolithic Semiconductors GmbH   (Germany)

^d CNES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; ELECTRON EMISSION; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE;

GATE-DRAIN SPACE; PASSIVATION CONTROL; PASSIVATION DEFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34548734749     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.07.085     Document Type: Article

References (11)

1. Green B.M., Chu K.K., Chumbes E.M., Smart J.A., Shealy J.R., and Eastman L.F. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's. IEEE Electr Dev Let 21 (2000)
2. Nakao T., Ohno Y., Kishimoto S., Maezawa K., and Mizutani T. Electroluminescence in AlGaN/GaN high electron mobility transistors under high bias voltage. Jpn J Appl Phys 41 (2002)
3. Ohno Y., Nakao T., Kishimoto S., Maezawa K., and Mizutani T. Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors. Appl Phys Let 84 (2004)
4. Shigekawa N., Shiojima K., and Suemitsu T. Optical study of high-biased AlGaN/GaN high-electron-mobility transistors. J Appl Phys 92 (2002)
5. Meneghesso G., Pierobon R., Rampazzo F., Tamiazzo G., Zanoni E., Bernat J., Kordos P., Basile A.F., Chini A., Verzellesi G. Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC, In: 2005 Reliability physics symposium, Proceedings. IEEE international, April 17-21; 2005.
6. Vetury R., Zhang N.Q., Keller S., and Mishra U.K. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs. IEEE Trans Elect Dev 48 (2001)
7. Vertiatchikh A.V., Eastman L.F., Schaff W.J., and Prunty T. Effect of surface passivation of AlGaN/GaN heterostructure field-effect transistor. Electron Let 38 (2002)
8. Shigekawa N., Onodera K., and Shiojima K. Device temperature measurement of highly biased AlGaN/GaN high-electron-mobility transistors. Jpn J Appl Phys 42 (2003)
9. Agnes P. Electric and optical characterization of hexagonal and cubic gallium nitride for obtaining blue transmitters. D.Phil. thesis, INSA Lyon, 8 December, 1999.
10. Katz O., Horn A., Bahir G., and Salzman J. Electron mobility in an AlGaN/GaN two-dimensional electron gas i-carrier concentration dependent mobility. IEEE Trans Elect Dev 50 N° 10 (2003)
11. Zanato D., Gokden S., Balkan N., Ridley B.K., and Schaff W.J. The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN. Semicond Sci Technol (2004)