Electrical characterization of (Ni/Au)/Al0.25Ga 0.75N/GaN/SiC Schottky barrier diode

Journal of Applied Physics

Volumn 110, Issue 1, 2011, Pages

  Saadaoui, Salah ^a   Mongi Ben Salem, Mohamed ^a   Gassoumi, Malek ^a   Maaref, Hassen ^a   Gaquière, Christophe ^b  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; C-V MEASUREMENT; CAPACITANCE VOLTAGE; CURRENT VOLTAGE; ELECTRICAL CHARACTERIZATION; HYSTERESIS PHENOMENON; IDEALITY FACTORS; INHOMOGENEITIES; PARASITIC EFFECT; SERIES RESISTANCES; TEMPERATURE RANGE; TUNNELING MECHANISM;

ACTIVATION ENERGY; BEHAVIORAL RESEARCH; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIODES; GALLIUM; HYSTERESIS; SCHOTTKY BARRIER DIODES;

POWER QUALITY;

EID: 79960478874     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3600229     Document Type: Article

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