Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors

Applied Physics Letters

Volumn 97, Issue 6, 2010, Pages

  Meneghini, M ^a   Stocco, A ^a   Ronchi, N ^b   Rossi, F ^b   Salviati, G ^b   Meneghesso, G ^a   Zanoni, E ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b IMEM CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BIAS CONDITIONS; ELECTROLUMINESCENCE SPECTRA; HIGH DRAIN VOLTAGE; HOT CARRIER LUMINESCENCE; LOW DRAIN VOLTAGES; LUMINESCENCE PROPERTIES; LUMINESCENCE SIGNALS; PARASITIC EMISSIONS;

BIAS VOLTAGE; CATHODOLUMINESCENCE; ELECTROLUMINESCENCE; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; HOT ELECTRONS; LIGHT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77955751654     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3479917     Document Type: Article

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