Trapping effect evaluation of gateless AlGaN/GaN heterojunction field-effect transistors using transmission-line-model method

Applied Physics Letters

Volumn 97, Issue 22, 2010, Pages

  Hu, Cheng Yu ^a   Hashizume, Tamotsu ^a   Ohi, Kota ^a   Tajima, Masafumi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HETEROJUNCTION; MEASUREMENT METHODS; MODEL METHOD; PASSIVATION FILM; REPRODUCIBILITIES; SHEET RESISTANCE VARIATION; STRESS-INDUCED; SURFACE TRAP; TRANSMISSION-LINE; TRAPPING EFFECTS; VOLTAGE STRESS;

ELECTRIC LINES; ELECTRIC RESISTANCE; GALLIUM NITRIDE; HETEROJUNCTIONS; PASSIVATION;

FIELD EFFECT TRANSISTORS;

EID: 78650653091     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3506583     Document Type: Article

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