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Applied Physics Express

Volumn 1, Issue 9, 2008, Pages 0911011-0911013

Deep-level optical spectroscopy investigation of band gap states in AlGaN/GaN hetero-interfaces

(3) Nakano, Yoshitaka a Irokawa, Yoshihiro b Takeguchi, Masaki b

a CHUBU UNIVERSITY (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CORUNDUM; ELECTRIC CONDUCTIVITY; ELECTRON GAS; ELECTRON MOBILITY; ENERGY GAP; GALLIUM NITRIDE; HETEROJUNCTIONS; PHASE INTERFACES; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM; TWO DIMENSIONAL ELECTRON GAS;

ALGAN/GAN; BAND GAPS; CAPACITANCE VOLTAGES; DEEP LEVELS; OFF MODES; OPTICAL SPECTROSCOPIES; OPTICAL SPECTROSCOPY TECHNIQUES; RECOMBINATION CENTERS; SAPPHIRE SUBSTRATES;

GALLIUM ALLOYS;

EID: 57649092301 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.1.091101 Document Type: Article

Times cited : (19)

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