A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors

Applied Physics Letters

Volumn 94, Issue 5, 2009, Pages

  Higashiwaki, Masataka ^a   Chen, Zhen ^a   Chu, Rongming ^a   Pei, Yi ^a   Keller, Stacia ^a   Mishra, Umesh K ^a   Hirose, Nobumitsu ^b   Matsui, Toshiaki ^b   Mimura, Takashi ^b,c  

^a Santa Barbara   (United States)

^b NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRON GAS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; GAS PERMEABLE MEMBRANES; INSULATION; PLASMA DEPOSITION; SURFACE DIFFUSION; TRANSISTORS; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS; VAPORS;

ALGAN; ALGAN/GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; CAT-CVD; CATALYTIC CHEMICAL VAPOR DEPOSITIONS; COMPARATIVE STUDIES; DEPOSITION METHODS; DEVICE CHARACTERISTICS; GATE INSULATORS; GATE-INSULATING LAYERS; GATE-LEAKAGE CURRENTS; HETERO INTERFACES; HIGH TEMPERATURES; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; MOCVD; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITIONS; SI DIFFUSIONS; SINX FILMS; SURFACE BARRIERS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 59849108363     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3079798     Document Type: Article

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