Near-midgap deep levels in Al0.26Ga0.74 N grown by metal-organic chemical vapor deposition

Applied Physics Letters

Volumn 94, Issue 15, 2009, Pages

  Sugawara, Katsuya ^a   Kotani, Junji ^a   Hashizume, Tamotsu ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE CHANGES; DARK CONDITIONS; DEEP LEVELS; DEEP-LEVEL TRANSIENT SPECTROSCOPIES; DLTS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; PHOTO-INDUCED; PHOTON ENERGIES; SAMPLING TIME; THERMAL EMISSIONS;

BLOOD VESSEL PROSTHESES; CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTIVITY MEASUREMENT; EMISSION SPECTROSCOPY; GALLIUM; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; VAPORS;

ACTIVATION ENERGY;

EID: 65249150141     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3119643     Document Type: Article

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