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Volumn 95, Issue 3, 2009, Pages

Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

(8) Lin, Chung Han a Merz, T A b Doutt, D R b Hetzer, M J b Joh, Jungwoo c Del Alamo, Jesús A c Mishra, U K d Brillson, L J a,b

a Ohio State University (United States)

b OHIO STATE UNIVERSITY (United States)

c Massachusetts Institute of Technology Cambridge (United States)

d University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; DEFECT EMISSION; DEFECT EVOLUTION; DEFECT GENERATION; DEPTH-RESOLVED; DEVICE OPERATIONS; GATE DRAIN; KELVIN PROBE FORCE MICROSCOPY; MICRO-CATHODOLUMINESCENCE SPECTROSCOPIES; NANOSCALE MAPPING; NEAR-BAND-EDGE ENERGY; SIDE GATE; SUBMICRON GATE; TEMPERATURE INCREASE;

ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDE; GAS EMISSIONS; LEAKAGE (FLUID); PHASE INTERFACES; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 67651241129 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3189102 Document Type: Article

Times cited : (30)

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