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Applied Physics Letters

Volumn 93, Issue 12, 2008, Pages

Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

(5) Stoklas, R a Gregusova D a Novak J a Vescan, A b Kordos P a,c

a INSTITUTE OF ELECTRICAL ENGINEERING (Slovakia)

b RWTH AACHEN UNIVERSITY (Germany)

c SLOVAK UNIVERSITY OF TECHNOLOGY (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; TRANSISTORS;

CONDUCTANCE ANALYSIS; FREQUENCY-DEPENDENT CAPACITANCE; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; TRAPPING EFFECTS;

FIELD EFFECT TRANSISTORS;

EID: 52949085057 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2990627 Document Type: Article

Times cited : (95)

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