Anomalous kink effect in GaN high electron mobility transistors

IEEE Electron Device Letters

Volumn 30, Issue 2, 2009, Pages 100-102

  Meneghesso, Gaudenzio ^a   Zanon, Franco ^a   Uren, Michael J ^b   Zanoni, Enrico ^a  

^a UNIVERSITY OF PADOVA   (Italy)

^b QINETIQ   (United Kingdom)

Author keywords

AlGaN GaN; GaN; High electron mobility transistor (HEMT); Kink effect

Indexed keywords

DIELECTRIC RELAXATION; DRAIN CURRENT; ELECTRON MOBILITY; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; RESONANT TUNNELING; SEMICONDUCTING GALLIUM; TRANSISTORS;

ALGAN/GAN; DRAIN VOLTAGES; GAN; GAN BUFFERS; GAN HIGH ELECTRON MOBILITY TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); KINK EFFECT; NEGATIVE CHARGES; NEGATIVE VOLTAGES; NONMONOTONIC BEHAVIORS; PHOTON ENERGIES; PHOTOSTIMULATION; PINCH-OFF VOLTAGES; ROOM TEMPERATURES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 59649099089     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2010067     Document Type: Article

References (12)

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