Current collapse in AlGaN/GaN transistors studied using time-resolved Raman thermography

Applied Physics Letters

Volumn 93, Issue 20, 2008, Pages

  Simms, R J T ^a   Pomeroy, J W ^a   Uren, M J ^b   Martin, T ^b   Kuball, M ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b QINETIQ   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; ELECTRON MOBILITY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MOSFET DEVICES; REMOTE SENSING; THERMOGRAPHY (IMAGING); THERMOGRAPHY (TEMPERATURE MEASUREMENT); TRANSISTORS;

ALGAN/GAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CURRENT COLLAPSES; DRIFT DIFFUSIONS; EFFECTIVE GATE LENGTHS; EXPERIMENTAL DATUMS; GATE REGIONS; LOWER LIMITS; TIME-RESOLVED;

ELECTRIC CURRENT MEASUREMENT;

EID: 56849131038     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3035855     Document Type: Article

References (14)

1. Y. -F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh, IEEE Electron Device Lett. 25, 3 (2004). 0741-3106
2. S. C. Binari, P. B. Klein, and T. E. Kazior, Proc. IEEE 0018-9219 10.1109/JPROC.2002.1021569 90, 1048 (2002).
3. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, IEEE Trans. Electron Devices 0018-9383 10.1109/16.906451 48, 560 (2001).
4. M. Faqir, G. Chini, G. Verzellesi, F. Fantini, F. Rampazzo, G. Meneghesso, E. Zanoni, and P. Kordoš, in Proceedings of the 31st Workshop on Compound Semiconductor Devices and Integrated Circuits, edited by, G. Meneghesso, (2007), p. 101.
5. G. Koley, V. Tilak, L. F. Eastman, and M. G. Spencer, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2003.812489 50, 886 (2003).
6. S. Rajasingam, J. W. Pomeroy, M. Kuball, M. J. Uren, T. Martin, D. C. Herbert, K. P. Hilton, and R. S. Balmer, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2004.830267 25, 456 (2004).
7. M. Kuball, J. M. Hayes, M. J. Uren, T. Martin, J. C. H. Birbeck, R. S. Balmer, and B. T. Hughes, IEEE Electron Device Lett. 0741-3106 10.1109/55.974795 23, 7 (2002).
8. A. Sarua, H. Ji, M. Kuball, M. J. Uren, T. Martin, K. P. Hilton, and R. S. Balmer, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2006.882274 53, 2438 (2006).
9. G. J. Riedel, J. W. Pomeroy, K. P. Hilton, J. O. Maclean, D. J. Wallis, M. J. Uren, T. Martin, and M. Kuball, IEEE Electron Device Lett. 29, 416 (2008). 0741-3106
10. M. Kuball, G. J. Riedel, J. W. Pomeroy, A. Sarua, M. J. Uren, T. Martin, K. P. Hilton, J. O. Maclean, and D. J. Wallis, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2006.889215 28, 86 (2007).
11. M. J. Uren, D. G. Hayes, J. O. Maclean, K. P. Hilton, D. J. Wallis, T. Martin, C. Roff, and P. J. Tasker, in Proceedings of the 31st Workshop on Compound Semiconductor Devices and Integrated Circuits, edited by, G. Meneghesso, (2007), p. 101.
12. T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto, and K. Maezawa, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2003.816549 50, 2015 (2003).
13. G. Meneghesso, F. Rampazzo, P. Kordos, G. Verzellesi, and E. Zanoni, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2006.885681 53, 2932 (2006).
14. R. J. T. Simms, J. W. Pomeroy, M. J. Uren, T. Martin, and M. Kuball, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2007.913005 55, 478 (2008).