Hot electrons in group-III nitrides at moderate electric fields

Applied Physics Letters

Volumn 80, Issue 13, 2002, Pages 2317-2319

  Barry, E A ^a   Kim, K W ^a   Kochelap, V A ^b  

^a North Carolina State University   (United States)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ELECTRON BEHAVIOR; ELECTRON KINETICS; GROUP III NITRIDES; INELASTIC PROCESS; IV CHARACTERISTICS; LOW FIELD; OPTICAL PHONON EMISSION; QUASI-SATURATION; TRANSVERSE DIRECTIONS;

CURRENT VOLTAGE CHARACTERISTICS; DISTRIBUTION FUNCTIONS; ELECTRIC FIELDS; ELECTRONS; GALLIUM NITRIDE; MONTE CARLO METHODS;

HOT ELECTRONS;

EID: 79955991355     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1464666     Document Type: Article

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