Surface leakage currents in SiNx passivated AlGaN/GaN HFETs

IEEE Electron Device Letters

Volumn 27, Issue 1, 2006, Pages 1-3

  Tan, W S ^a   Uren, M J ^b   Houston, P A ^a   Green, R T ^a   Balmer, R S ^b   Martin, T ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b QINETIQ   (United Kingdom)

Author keywords

Current slump; Gallium nitride; Gate lag; Heterostructure field effect transistors (HFETs); Leakage currents; SINx passivation

Indexed keywords

DEPOSITION; HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS;

CURRENT SLUMP; GATE LAG; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; SURFACE LEAKAGE CURRENTS;

FIELD EFFECT TRANSISTORS;

EID: 33645473212     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.860383     Document Type: Article

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