VT - VSUB characterization of AlGaN/GaN HFET with p-type body layer

IEEE Transactions on Electron Devices

Volumn 58, Issue 12, 2011, Pages 4265-4271

  Hu, Cheng Yu ^a   Kikuta, Daigo ^b   Sugimoto, Masahiro ^c   Ao, Jin Ping ^a   Ohno, Yasuo ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b Rd Management Section   (Japan)

^c TOYOTA MOTOR CORPORATION   (Japan)

Author keywords

AlGaN GaN heterostructure field effect transistor (HFET); buffer layer; p GaN; stress; substrate bias; trap

Indexed keywords

ACCEPTOR CONCENTRATIONS; ALGAN/GAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; ALGAN/GAN HFETS; DEEP TRAPS; DOPING PROFILES; ENERGY LEVEL; MOSFETS; NEGATIVE SUBSTRATES; P-GAN; P-TYPE; SUBSTRATE BIAS; SUBSTRATE LAYERS; TRAP; UV-LIGHT IRRADIATION;

BUFFER LAYERS; GALLIUM NITRIDE; HOLE CONCENTRATION; OHMIC CONTACTS; SEMICONDUCTING SILICON COMPOUNDS; STRESSES; SUBSTRATES;

FIELD EFFECT TRANSISTORS;

EID: 82155166227     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2166402     Document Type: Article

References (18)

1. I. Yoshida, T. Okabe, M. Katsueda, S. Ochi, and M. Nagata, "Thermal stability and secondary breakdown in planar power MOSFETs," IEEE Trans. Electron Devices, vol. ED-27, no. 2, pp. 395-398, Feb. 1980.
2. S. C. Binari, P. B. Klein, and T. E. Kazior, "Trapping effects in GaN and SiC microwave FETs," Proc. IEEE, vol. 90, no. 6, pp. 1048-1058, Jun. 2002.
3. A. Sozza, C. Dua, E. Morvan, M. A. diForte-Poisson, S. Delage, F. Rampazzo, A. Tazzoli, F. Danesin, G. Meneghesso, E. Zanoni, A. Curutchet, N. Malbert, N. Labat, B. Grimbert, and J.-C. De Jaeger, "Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress," in IEDM Tech. Dig., 2005, pp. 590-593.
4. P. B. Klein, S. C. Binari, J. A. Freitas, Jr., and A. E. Wichenden, "Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors," J. Appl. Phys., vol. 88, no. 5, pp. 2843-2852, Sep. 2000.
5. T. Okino, M. Ochiai, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani, "Drain current DLTS of AlGaN-GaN MIS-HEMTs," IEEE Electron Device Lett., vol. 25, no. 8, pp. 523-525, Aug. 2004.
6. A. Tarakji, G. Simin, N. llinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. A. Khan, M. S. Shur, and R. Gaska, "Mechanism of radiofrequency current collapse in GaN-AlGaN field-effect transistors," Appl. Phys. Lett., vol. 78, no. 15, pp. 2169-2171, Apr. 2001.
7. J. M. Shannon, "D.C. measurement of the space charge capacitance and impurity profile beneath the gate of an MOST," Solid State Electron., vol. 14, no. 11, pp. 1099-1106, Nov. 1971.
8. M. G. Buehler, "Dopant profiles determined from enhancement-mode MOSFET dc measurements," Appl. Phys. Lett., vol. 31, no. 12, pp. 848- 850, Dec. 1977.
9. M. G. Buehler, "Effect of the drain-source voltage on dopant profiles obtained from the DC MOSFET profile method," IEEE Trans. Electron Devices, vol. ED-27, no. 12, pp. 2273-2277, Dec. 1980.
10. Y. Ohno, "Short-channel MOSFET VT - VDS characteristics model based on a point charge and its mirror images," IEEE Trans. Electron Devices, vol. ED-29, no. 2, pp. 211-216, Feb. 1982.
11. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. Hoboken, NJ: Wiley, 2007.
12. T. Hashizume, "Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface," J. Appl. Phys., vol. 94, no. 1, pp. 431-436, Jul. 2003.
13. C. Y. Hu, J. P. Ao, M. Okada, and Y. Ohno, "Annealing with Ni for ohmic contact formation on ICP-etched p-GaN," Electron. Lett., vol. 44, no. 2, pp. 155-157, Jan. 2008.
14. W. Götz, N. M. Johnson, J. Walker, D. P. Bour, and R. A. Street, "Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 68, no. 5, pp. 667-669, Jan. 1996.
15. H. Yano, S. Kumashiro, N. Goto, and Y. Ohno, "Two dimensional transient device simulator with deep trap model for compound semiconductor devices," in IEDM Tech. Dig., 1989, pp. 151-154.
16. W. Shockley andW. T. Read, "Statistics of the recombination of holes and electrons," Phys. Rev., vol. 87, no. 5, pp. 835-842, Sep. 1952.
17. R. N. Hall, "Recombination processes in semiconductors," Proc. Inst. Elect. Eng., vol. 106B, suppl. 17, pp. 923-931, 1959.
18. P. B. Klein, S. C. Binari, K. Ikossi, A. E. Wickenden, D. D. Koleske, and R. L. Henry, "Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy," Appl. Phys. Lett., vol. 79, no. 21, pp. 3527-3529, Nov. 2001.