A 120-W boost converter operation using a high-voltage GaN-HEMT

IEEE Electron Device Letters

Volumn 29, Issue 1, 2008, Pages 8-10

  Saito, Wataru ^a   Nitta, Tomohiro ^a   Kakiuchi, Yorito ^a   Saito, Yasunobu ^a   Tsuda, Kunio ^a   Omura, Ichiro ^a   Yamaguchi, Masakazu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

GaN; HEMT; High voltage; Power semiconductor device

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; POWER ELECTRONICS; SEMICONDUCTING GALLIUM COMPOUNDS; SWITCHING FREQUENCY;

BOOST CONVERTER; HIGH VOLTAGE; POWER SEMICONDUCTOR DEVICE; SWITCHING DEVICE;

POWER CONVERTERS;

EID: 37549010679     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.910796     Document Type: Article

References (12)

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