GaN HEMT reliability through the decade

ECS Transactions

Volumn 19, Issue 3, 2009, Pages 113-121

  Smith, K V ^a   Brierley, S ^a   McAnulty, R ^a   Tilas, C ^a   Zarkh, D ^a   Benedek, M ^a   Phalon, P ^a   Hooven, A ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; INTERFACE STATES;

DEGRADATION MECHANISM; DEVICE LIFETIME; GAN BASED; GAN HEMTS; LIFE-TESTING; MATERIAL QUALITY;

WIDE BAND GAP SEMICONDUCTORS;

EID: 74349096581     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3120692     Document Type: Conference Paper

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