Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters

Volumn 84, Issue 12, 2004, Pages 2184-2186

  Ohno, Yutaka ^a   Nakao, Takeshi ^a   Kishimoto, Shigeru ^a   Maezawa, Koichi ^a   Mizutani, Takashi ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTROLUMINESCENCE; ELECTRON TRAPS; ENERGY GAP; GATES (TRANSISTOR); HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; IONIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON NITRIDE; SURFACE PHENOMENA;

GATE REVERSE CURRENT; OFF-STATE BREAKDOWN; SURFACE PASSIVATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 1942540693     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1687983     Document Type: Article

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