Gallium indium nitride-based green lasers

Journal of Lightwave Technology

Volumn 30, Issue 5, 2012, Pages 679-699

  Sizov, Dmitry ^a   Bhat, Rajaram ^a   Zah, Chung En ^a  

^a Science and Technology Division   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER INJECTION; EPITAXIAL STRUCTURE; FACET FORMATION; GREEN LASER; GROUP III NITRIDES; LASER CHIPS; MECHANICAL STRAIN; OPTICAL CONFINEMENT; RIDGE WAVEGUIDES; SELF-ALIGNED; SPECIFIC MATERIALS; SPECTRAL RANGE;

CRYSTAL GROWTH; GALLIUM NITRIDE; MATERIALS PROPERTIES; STRUCTURAL DESIGN;

GALLIUM ALLOYS;

EID: 84856823031     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2011.2176918     Document Type: Review

References (113)

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