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Volumn 40, Issue 5 A, 2001, Pages 3075-3081

Wavelength dependence of InGaN laser diode characteristics

Author keywords

Blue laser; GaN substrate; InGaN; Lateral overgrowth; Lifetime; Quantum well

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

EID: 0035328412     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.3075     Document Type: Article
Times cited : (97)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.