Design strategies for InGaN-based green lasers

IEEE Journal of Quantum Electronics

Volumn 46, Issue 2, 2010, Pages 238-245

  Venkatachalam, Anusha ^a   Klein, Benjamin ^a   Ryou, Jae Hyun ^a   Shen, Shyh Chiang ^a   Dupuis, Russell D ^a   Yoder, P Douglas ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

InGaN; Optical gain; Polarization charges; Quantum confined stark effect; Quantum wells; Strain; Transition energy

Indexed keywords

ACTIVE REGIONS; BUFFER LAYER MATERIALS; DESIGN PARAMETERS; DESIGN STRATEGIES; EPITAXIAL LAYER STRUCTURES; GREEN LASER; OPTICAL TRANSITION ENERGIES; POLARIZATION CHARGES; QUANTUM CONFINED STARK EFFECT; QUANTUM WELL; SINGLE QUANTUM WELL; TRANSITION ENERGY;

EPITAXIAL LAYERS; GALLIUM; LARGE SCALE SYSTEMS; OPTICAL GAIN; POLARIZATION; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM DOTS; SPECTRAL DENSITY; SPECTROSCOPY; STARK EFFECT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 73949131327     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2009.2029348     Document Type: Article

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