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Volumn 78, Issue 23, 2008, Pages

Polarization switching phenomena in semipolar Inx Ga1-x N/GaN quantum well active layers

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Indexed keywords


EID: 58049091512     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.78.233303     Document Type: Article
Times cited : (83)

References (27)
  • 8
    • 0000183040 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.59.4725
    • S.-H. Park and S.-L. Chuang, Phys. Rev. B 59, 4725 (1999). 10.1103/PhysRevB.59.4725
    • (1999) Phys. Rev. B , vol.59 , pp. 4725
    • Park, S.-H.1    Chuang, S.-L.2
  • 11
    • 33947574515 scopus 로고    scopus 로고
    • 10.1063/1.2715003
    • B. Gil, Appl. Phys. Lett. 90, 121903 (2007). 10.1063/1.2715003
    • (2007) Appl. Phys. Lett. , vol.90 , pp. 121903
    • Gil, B.1
  • 14
    • 0001391697 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.56.12446
    • B. Gil and A. Alemu, Phys. Rev. B 56, 12446 (1997). 10.1103/PhysRevB.56. 12446
    • (1997) Phys. Rev. B , vol.56 , pp. 12446
    • Gil, B.1    Alemu, A.2
  • 23
    • 58049129043 scopus 로고    scopus 로고
    • In strained Inx Ga1-x N, the | X±iY -like and |Z -like hole states are mixed, and therefore, the valence bands are simply denoted as A, B, and C from the top in this study.
    • In strained Inx Ga1-x N, the | X±iY -like and |Z -like hole states are mixed, and therefore, the valence bands are simply denoted as A, B, and C from the top in this study.
  • 24
    • 0942291589 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.67.235205
    • D. Fritsch, H. Schmidt, and M. Grundmann, Phys. Rev. B 67, 235205 (2003), and references therein. 10.1103/PhysRevB.67.235205
    • (2003) Phys. Rev. B , vol.67 , pp. 235205
    • Fritsch, D.1    Schmidt, H.2    Grundmann, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.