Compositional dependence of phase separation in InGaN layers

Applied Physics Letters

Volumn 85, Issue 11, 2004, Pages 1961-1963

  Rao, M ^a   Kim, D ^a   Mahajan, S ^a  

^a Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPILAYERS; MODULATION WAVELENGTHS; REACTOR PRESSURE; SELECTED AREA DIFFRACTION PATTERN (SADP); VICINITY;

COMPOSITION; GALLIUM NITRIDE; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; PHASE SEPARATION; SATELLITES; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM COMPOUNDS;

EID: 5444231827     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1791327     Document Type: Article

References (7)

1. A. Zunger and S. Mahajan, in Handbook on Semiconductors, edited by S. Mahajan (Elsevier, Amsterdam, 1994), Vol. 3, p. 1410.
2. I. Ho and G. B. Stringfellow, Appl. Phys. Lett. 69, 2701 (1996).
3. S. Y. Karpov, MRS Internet J. Nitride Semicond. Res. 3, 16 (1998).
4. M. K. Behbehani, E. L. Piner, S. X. Liu, N A. El-Masry, and S. M. Bedair, Appl. Phys. Lett. 75, 2203 (1999).
5. A. N. Westmeyer and S. Mahajan, Appl. Phys. Lett. 79, 2710 (2001).
6. A. N. Westmeyer, Ph.D. thesis, Carnegie Mellon University, 2002.
7. K. Hiramatsu, Y. Kawaguchi, M. Shimizu, N. Sawaki, T. Zheleva, R. F. Davis, H. Tsuda, W. Taki, N. Kuwano, and K. Oki, MRS Internet J. Nitride Semicond. Res. 2, 6 (1997).