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Volumn 94, Issue 8, 2009, Pages

500 nm electrically driven InGaN based laser diodes

(7) Queren, D́siŕe a Avramescu, Adrian a Brüderl, Georg a Breidenassel, Andreas a Schillgalies, Marc a Lutgen, Stephan a Strau, Uwe a

a OSRAM OPTO SEMICONDUCTORS GMBH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LASERS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

AT WAVELENGTHS; CURRENT-DRIVEN; EMISSION ENERGIES; GAN SUBSTRATES; GROWTH ORIENTATIONS; HIGH OUTPUTS; HIGH SLOPE EFFICIENCIES; INGAN LASER DIODES; INGAN QUANTUM WELLS; LASER DIODES; LASER STRUCTURES; LONG WAVELENGTH LASER DIODES; LOW DEFECT DENSITIES; LOW THRESHOLD CURRENT DENSITIES; PIEZO-ELECTRIC FIELDS;

QUANTUM WELL LASERS;

EID: 61349183692 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3089573 Document Type: Article

Times cited : (150)

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