Exciton localization in InGaN quantum well devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 4, 1998, Pages 2204-2214

  Chichibu, Shigefusa ^a,b   Sota, Takayuki ^c   Wada, Kazumi ^d,f   Nakamura, Shuji ^e  

^a University of California   (United States)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c WASEDA UNIVERSITY   (Japan)

^d NTT CORPORATION   (Japan)

^e NICHIA CORPORATION   (Japan)

^f Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11644321949     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590149     Document Type: Article

References (94)

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