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Volumn 315, Issue 1, 2011, Pages 258-262

InGaN-based true green laser diodes on novel semi-polar {2 0 2̄1} GaN substrates

(13) Ueno, Masaki a Yoshizumi, Yusuke a Enya, Yohei a Kyono, Takashi a Adachi, Masahiro a Takagi, Shinpei a Tokuyama, Shinji a Sumitomo, Takamichi a Sumiyoshi, Kazuhide a Saga, Nobuhiro a Ikegami, Takatoshi a Katayama, Koji a Nakamura, Takao a

a SUMITOMO ELECTRIC INDUSTRIES LTD (Japan)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Nitrides; B3. Laser diodes

Indexed keywords

A3.METALORGANIC CHEMICAL VAPOR DEPOSITION; B1. NITRIDES; B3. LASER DIODES; CLADDING LAYER; CONTINUOUS-WAVE OPERATIONS; CRYSTAL QUALITIES; EMISSION CHARACTERISTICS; GAN SUBSTRATE; GREEN LASER; INALGAN; INGAN QUANTUM WELLS; LASER DIODES; LASER DISPLAY; LASING WAVELENGTH; LATTICE-MATCHED; OPTICAL POLARIZATION MEASUREMENTS; PIEZO-ELECTRIC FIELDS; PULSED OPERATION; SLOPE EFFICIENCIES; SPECTRAL REGION;

DIODES; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM ALLOYS;

EID: 79551685357 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.07.016 Document Type: Article

Times cited : (23)

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