Quality and thermal stability of thin InGaN films

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2933-2936

  Queren, Désirée ^a   Schillgalies, Marc ^a   Avramescu, Adrian ^a   Brüderl, Georg ^a   Laubsch, Ansgar ^a   Lutgen, Stephan ^a   Strauß, Uwe ^a  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

A1. Diffusion; A1. Point defects; A1. Thermal stability; A3. Quantum wells; B1. InGaN; B3. Laser diodes

Indexed keywords

A1. DIFFUSION; A1. POINT DEFECTS; A1. THERMAL STABILITY; A3. QUANTUM WELLS; B1. INGAN; B3. LASER DIODES;

DEFECTS; DIFFUSION; DIODES; EXTRACTION; INDIUM; LASERS; POINT DEFECTS; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS; THERMODYNAMIC STABILITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 65749110875     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.066     Document Type: Article

References (6)

1. Miyoshi T., Yanamoto T., Kozaki T., Nagahama S., Narukawa Y., Sano M., Yamada T., and Mukai T. Proc. SPIE 6894 (2008) 689414
2. Domagala J., Leszczynski M., Prystawko P., Suski T., Langer R., Barski A., and Bremser M. J. Alloys Compd. 286 (1999) 284
3. Bhuiyan A.G., Hashimoto A., and Yamamoto A. J. Appl. Phys. 94 (2003) 2779
4. Ryu H.Y., Ha K.H., Chae J.H., Kim K.S., Son J.K., Nam O.H., Park Y.J., and Shim J.I. Appl. Phys. Lett. 89 (2006) 171106
5. U. Strauß, et al., Proc. SPIE 6894 (2008) 689417.
6. Polyakov A.Y., Govorkov A.V., Smirnov N.B., Theys B., Jomard F., Nikitina I.P., Nikolaev A.E., and Dimitriev V.A. Solid State Electron. 44 (2000) 1955