GaN-based laser diodes emitting from ultraviolet to blue-green

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4995, Issue , 2003, Pages 108-116

  Nagahama, Shin Ichi ^a   Sano, Masahiko ^a   Yanamoto, Tomoya ^a   Morita, Daisuke ^a   Miki, Osamu ^a   Sakamoto, Keiji ^a   Yamamoto, Masashi ^a   Matsuyama, Yuuji ^a   Kawata, Yasuhiro ^a   Murayama, Takashi ^a   Mukai, Takashi ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

AlInGaN; Blue green; High power; Laser diode; Ultraviolet

Indexed keywords

CURRENT DENSITY; EPITAXIAL GROWTH; FABRICATION; HEAT RESISTANCE; HIGH POWER LASERS; QUANTUM WELL LASERS; SAPPHIRE; SUBSTRATES;

ARRAY DEVICES; LASING WAVELENGTH;

SEMICONDUCTOR LASERS;

EID: 0141567921     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.475759     Document Type: Conference Paper

References (9)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, "InGaN-Based Multi-Quantum-Well-Structure Laser Diodes", Jpn. J. Appl. Phys., vol. 35, pp L74-L76, 1996.
2. A. Usui, H. Sunakawa, A. Sakai, and A. Yamaguchi, "Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy," Jpn. J. Appl. Phys., vol. 36, pp. L899-L902, 1997.
3. O. H. Nam, M. D. Bremser, T. Zheleva, and R. F. Davis, "Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy," Appl. Phys. Lett., vol. 71, pp. 2638-2340, 1997.
4. S. Nagahama, N. Iwasa, M. Senoh, T. Matsushita, Y. Sugimoto, H. Kiyoku, T. Kozaki, M. Sano, H. Matsumura, H. Umemoto, K. Chocho and T. Mukai, "High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates," Jpn. J. Appl. Phys., vol. 39, pp. L647-L650, 2000.
5. (1-x-y)N", Jpn. J. Appl. Phys., Vol. 40, pp L788-L791, 2001.
6. S. Nagahama, T. Yanamoto, M. Sano and T. Mukai, "Ultraviolet GaN Single Quantum Well Laser Diodes", Jpn. J. Appl. Phys., vol. 40, pp L785-L787, 2001.
7. S. Nagahama, T. Yanamoto, M. Sano and T. Mukai, "Characteristics of InGaN laser diodes in the pure blue region", Appl. Phys. Lett., vol. 79, pp 1948-1950, 2001.
8. S. Nagahama, T. Yanamoto, M. Sano and T. Mukai, "Wavelength Dependence of InGaN Laser Diode Characteristics", Jpn. J. Appl. Phys., vol. 40, pp 3075-3081, 2001.
9. M. K. Kelly, O. Ambacher, R. Dimitrov, H. Angerer, R. Handschuh and M. Stutzmann,"LASER-PROCESSING FOR PATTERNED AND PREE-STANDING NITRIDE FILMS," Mater. Res. Soc. Symp. Proc., vol. 482, pp. 973-978, 1998.