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Volumn 3, Issue 12, 2010, Pages

Low threshold current density InGaN based 520-530nm green laser diodes on semi-polar {202̄1} free-standing GaN substrates

Author keywords

[No Author keywords available]

Indexed keywords

BEAM DIVERGENCE ANGLES; CHARACTERISTICS TEMPERATURE; CW OPERATION; DEVICE CHARACTERISTICS; GAN SUBSTRATE; GREEN LASER; GREEN REGIONS; LOW THRESHOLD CURRENT DENSITY; ROOM TEMPERATURE; THRESHOLD CURRENTS;

EID: 78650854012     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.121001     Document Type: Article
Times cited : (97)

References (25)
  • 17
    • 78650880162 scopus 로고    scopus 로고
    • Dr. Theisis, Department of Electronic Science and Engineering, Kyoto University, Kyoto
    • K. Kojima: Dr. Theisis, Department of Electronic Science and Engineering, Kyoto University, Kyoto (2008).
    • (2008)
    • Kojima, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.