Epitaxial growth and optical properties of semipolar (112̄2) GaN and InGaN/GaN quantum wells on GaN bulk substrates

Applied Physics Letters

Volumn 89, Issue 21, 2006, Pages

  Ueda, M ^a   Kojima, K ^a   Funato, M ^a   Kawakami, Y ^a   Narukawa, Y ^b   Mukai, T ^b  

^a KYOTO UNIVERSITY   (Japan)

^b NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL SYMMETRY; ELECTRIC FIELD EFFECTS; EPITAXIAL GROWTH; EXCITONS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POLARIZATION; SEMICONDUCTING GALLIUM; SUBSTRATES; VAPOR PHASE EPITAXY;

FAST RADIATIVE RECOMBINATION PROCESSES; GAN BULK SUBSTRATES; HOMOEPITAXIAL LAYERS; METAL ORGANIC VAPOR PHASE EPITAXY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33845463122     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2397029     Document Type: Article

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