Internal field effects on the lasing characteristics of InGaN/GaN quantum well lasers

Journal of Applied Physics

Volumn 104, Issue 11, 2008, Pages

  Dialynas, G E ^a,b   Deligeorgis, G ^a,b   Zervos, M ^c   Pelekanos, N T ^a,b  

^a INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^b UNIVERSITY OF CRETE   (Greece)

^c UNIVERSITY OF CYPRUS   (Cyprus)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; LASERS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES;

ADVERSE EFFECTS; BLUE LASER DIODES; CAVITY LOSSES; EFFECTIVE MASSES; HETEROSTRUCTURES; INGAN/GAN QUANTUM WELLS; INTERNAL ELECTRIC FIELDS; INTERNAL FIELD EFFECTS; INTERNAL FIELDS; LASING CHARACTERISTICS; LASING WAVELENGTHS; QUANTUM WELLS; SINGLE QUANTUM WELLS; WELL WIDTHS;

QUANTUM WELL LASERS;

EID: 58149267583     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3021103     Document Type: Article

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