메뉴 건너뛰기




Volumn 1, Issue 9, 2008, Pages 0911021-0911023

Demonstration of 426 nm InGaN/GaN laser diodes fabricated on free-standing semipolar (112̄2) gallium nitride substrates

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEFECT DENSITY; DIODES; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; LADDER NETWORKS; LASERS; NITRIDES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; SEMICONDUCTING GALLIUM;

EID: 57649097966     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.091102     Document Type: Article
Times cited : (26)

References (31)
  • 17
    • 35649000194 scopus 로고    scopus 로고
    • K.-C. Kim, M. C. Schmidt, H. Sato, F. Wu, N. Fellows, M. Saito, K. Fujito, J. S. Speck, S. Nakamura, and S. P. DenBaars: Phys. Status Solidi: Rapid Res. Lett. 1 (2007) 125.
    • K.-C. Kim, M. C. Schmidt, H. Sato, F. Wu, N. Fellows, M. Saito, K. Fujito, J. S. Speck, S. Nakamura, and S. P. DenBaars: Phys. Status Solidi: Rapid Res. Lett. 1 (2007) 125.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.