Electronic and optical properties of a- and m-plane wurtzite InGaN-GaN quantum wells

IEEE Journal of Quantum Electronics

Volumn 43, Issue 12, 2007, Pages 1175-1182

  Park, Seoung Hwan ^a   Ahn, Doyeol ^b   Chuang, Shun Lien ^c  

^a Catholic University of Daegu   (South Korea)

^b University of Seoul   (South Korea)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

A plane; C plane; InGaN GaN; M plane; Non Markovian; Nonpolar; Optical gain; Quantum well (QW)

Indexed keywords

CRYSTAL ORIENTATION; ELECTRONIC PROPERTIES; ENERGY GAP; LIGHT POLARIZATION; OPTICAL GAIN; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS;

MASS THEORY; OPTICAL MATRIX ELEMENT; WURTZITE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 36348994863     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2007.905009     Document Type: Article

References (43)

1. S. Nakamura and G. Fasol, The Blue Laser Diode. Berlin, Germany: Springer-Verlag, 1997.
2. G. Martin, A. Botchkarev, A. Rockett, and H. Morkoç, "Valence-band discontinuities of wurtzite GaN, AIN, and InN heterojunctions measured by x-ray photoemission spectroscopy," Appl. Phys. Lett., vol. 68, pp. 2541-2543, 1996.
3. F. Bernardini, V. Fiorentini, and D. Vanderbilt, "Spontaneous polarization and piezoelectric constants of III-V nitrides," Phys. Rev. B, vol. 56, pp. 10024-10027, 1997.
4. W. Fang and S. L. Chuang, "Theoretical prediction of GaN lasing and temperature sensitivity," Appl. Phys. Lett., vol. 67, pp. 751-753, 1995.
5. S. H. Park, "Crystal orientation effects on electronic properties of wurtzite GaN/AlGaN quantum wells with spontaneous and piezo-electric polarization," Jpn. J. Appl. Phys., vol. 39, pp. 3478-3482, 2000.
6. P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, "Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes," in Nature, London, 2000, vol. 406, pp. 865-868.
7. 2 (100) by plasma-assisted molecular-beam epitaxy," Phys. Rev. B, vol. 67, p. 041306, 2003.
8. 1-xN multiple quantum wells on R-plane (1022) sapphire substrates," Appl. Phys. Lett., vol. 80, pp. 4369-4371, 2002.
9. M. D. Craven, P. Waltereit, F. Wu, J. S. Speck, and S. P. DenBaars, "Characterization of α -plane GaN/(AI,Ga)N multiple quantum wells grown via metalorganic chemical vapor deposition," Jpn. J. Appl. Phys., vol. 42, pp. L235-L238, 2003.
10. A. Chitnis, C. Chen, V. Adivarahan, M. Shatalov, E. Kuokstis, V. Mandavilli, J. Yang, and M. A. Khan, "Visible light-emitting diodes using α-plane GaN/InGaN multiple quantum wells over r-plane sapphire," Appl. Phys. Lett., vol. 84, pp. 3663-3665, 2004.
11. K. Domen, K. Horino, A. Kuramata, and T. Tanahashi, "Optical gain for wurtzite GaN with anisotropic strain in c plane," Appl. Phys. Lett. vol. 70, pp. 987-989, 1997.
12. A. Niwa, T. Ohtoshi, and T. Kuroda, "Valence subband structures of (1010)-GaN/AlGaN strained quantum wells calculated by the tight-binding method," Appl. Phys. Lett., vol. 70, pp. 2159-2161, 1997.
13. S. H. Park and S. L. Chuang, "Crystal-orientation effects on the piezo-electric field and electronic properties of strained wurtzite semiconductors," Phys. Rev. B, vol. 59, pp. 4725-4737, 1999.
14. T. Takeuchi, H. Amano, and I. Akasaki, "Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells," Jpn. J. Appl. Phys. vol. 39, pp. 413-416, 2000.
15. F. Mireles and S. E. Ulloa, "Strain and crystallographic orientation effects on the valence subbands of wurtzite quantum wells," Phys. Rev. B, vol. 62, pp. 2562-2572, 2000.
16. S. H. Park, "Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wells," J. Appl. Phys., vol. 91, pp. 9904-9908, 2002.
17. C. Y.-P. Chao and S. L. Chuang, "Spin-orbit-coupling effects on the valence-band structure of strained semiconductor quantum wells," Phy. Rev. B, vol. 46, pp. 4110-4122, 1992.
18. S. H. Park and S. L. Chuang, "Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers," Appl. Phys. Lett., vol. 72, pp. 3103-3105, 1998.
19. S. L. Chuang and C. S. Chang, "The kp method for strained wurtzite semiconductors," Phys. Rev. B, vol. 54, pp. 2491-2504, 1996.
20. S. L. Chuang, "Optical gain of strained wurtzite GaN quantum-well lasers," IEEE J. Quantum Electron., vol. 32, no. 10, pp. 1791-1800, Oct. 1996.
21. J. M. Hinckley and J. Singh, "Influence of substrate composition and crystallographic orientation on the band structure of pseudomorphic Si-Ge alloy films," Phys. Rev. B, vol. 42, pp. 3546-3566, 1990.
22. J. F. Nye, Physical Properties of Crystals. Oxford, U.K.: Clarendon, 1989, ch. 5 and 6.
23. D. L. Smith and C. Mailhiot, "Piezoelectric effects win strained-layer superlattices," J. Appl. Phys., vol. 63, pp. 2717-2719, 1998.
24. S. H. Park and S. L. Chuang, "Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects," J. Appl. Phys., vol. 87, pp. 353-364, 2000.
25. D. Ahn, "Theory of non-Markovian optical gain in quantum-well lasers," Prog. Quantum Electron., vol. 21, pp. 249-287, 1997.
26. S. H. Park, S. L. Chuang, and D. Ahn, "Intraband relaxation time effects on non-Markovian gain with many-body effects and comparison with experiment," Semicond. Sci. Technol., vol. 15, pp. 203-208, 2000.
27. W. W. Chow, S. W. Koch, and M. Sergent, III, Semiconductor-Laser Physics. Berlin, Germany: Springer-Verlag, 1994.
28. H. Haug and S. W. Koch, Quantum Theory of the Optical and Electronic Properties of Semiconductors., Singapore: World Scientific, 1993.
29. I. Vurgaftman and J. R. Meyer, "Band parameters for nitrogen-containing semiconductors," J. Appl. Phys., vol. 94, pp. 3675-3696, 2003.
30. H. P. Maruska and J. J. Tietjen, "The preparation and properties of vapor-deposited single-crystal-line GaN," Appl. Phys. Lett., vol. 15, pp. 327-329, 1969.
31. K. Kim, W. R. L. Lambrecht, and B. Segall, "Elastic constants and related properties of tetrahedrally bonded BN, AIN, GaN, and InN," Phys. Rev. B, vol. 53, pp. 16310-16326, 1996.
32. K. H. Hellwege and O. Madelung, Physics of Group IV Elements and III-V Compounds. Berlin, Germany: Springer-Verlag, 1982, vol. 17, Landolt-Börnstein, New Series, Group III, pt. a.
33. T. L. Tansley and C. P. Foley, "Optical bandgap of indium nitride," J. Appl. Phys., vol. 59, pp. 3241-3244, 1986.
34. A. Shikanai, T. Azuhata, T. Sota, S. Chichibu, A. Kuramata, K. Horino, and S. Nakamura, "Biaxial strain dependence of exciton resonance energies in wurtzite GaN," J. Appl. Phys., vol. 81, pp. 417-424, 1997.
35. S. Nakamura, "InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained-layer superlattices," IEEE J. Sel. Topics Quantum Electron., vol. 4, no. 3, pp. 483-489, May/Jun. 1998.
36. M. Suzuki, T. Uenoyama, and A. Yanase, "First-principles calculations of effective-mass parameters of AIN and GaN," Phys. Rev. B, vol. 52, pp. 8132-8139, 1995.
37. W. W. Chow, M. Hagerott, A. Gimdt, and S. W. Koch, "Threshold conditions for an ultraviolet wavelength GaN quantum-well laser," IEEE J. Sel. Topics Quantum Electron., vol. 4, no. 3, pp. 514-519, May/Jun. 1998.
38. K. Kim, W. R. L. Lambrecht, and B. Segall, "Effective masses and valence-band splittings in GaN and AIN," Phys. Rev. B, vol. 56, pp. 7363-7375, 1997.
39. M. Kumagai, S. L. Chuang, and H. Ando, "Analytical solutions of the block-diagonalized Hamiltonian for strained wurtzite semi conductors," Phys. Rev. B, vol. 57, pp. 15303-15314, 1998.
40. S. H. Park and S. L. Chuang, "Comparison of zinc-blende and wurtzite GaN semiconductors with spontaneous polarization and piezoelectric field effects," J. Appl. Phys., vol. 87, pp. 353-364, 2000.
41. T. Ohtoshi, A. Niwa, and T. Kuroda, "Crystal orientation effect on valence-subband structures in wurtzite-GaN strained quantum wells," Jpn. J. Appl. Phys., vol. 35, pp. L1566-LI568, 1996.
42. V. W. L. Chin, T. L. Tansley, and Osotchan, "Electron mobilities in gallium, indium, and aluminum nitrides," J. Appl. Phys., vol. 75, pp. 7365-7372, 1994.
43. A. Polian, M. Grimsditch, and I. Grzegory, "Elastic constants of gallium nitride," J. Appl. Phys., vol. 79, pp. 3343-3344, 1996.