-
1
-
-
59249094926
-
Lasing and optical gain around 500 nm from optically pumped lasers grown on c-plane GaN substrates
-
D. S. Sizov, R. Bhat, J. Napierala, J.-Q. Xi, D. E. Allen, C. S. Gallinat, and C.-En Zah, "Lasing and optical gain around 500 nm from optically pumped lasers grown on c-plane GaN substrates," Opt. Lett., vol. 34, pp. 328-330, 2009.
-
(2009)
Opt. Lett.
, vol.34
, pp. 328-330
-
-
Sizov, D.S.1
Bhat, R.2
Napierala, J.3
Xi, J.-Q.4
Allen, D.E.5
Gallinat, C.S.6
Zah, C.-E.7
-
2
-
-
61349183692
-
500 nm electrically driven InGaN based laser diodes
-
D. Queren, A. Avramescu, G. Brüderl, A. Breidenassel, M. Schillgalies, S. Lutgen, and U. Strauß, "500 nm electrically driven InGaN based laser diodes," Appl. Phys. Lett., vol. 94, pp. 081119-1-081119-3, 2009.
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 0811191-0811193
-
-
Queren, D.1
Avramescu, A.2
Brüderl, G.3
Breidenassel, A.4
Schillgalies, M.5
Lutgen, S.6
Strauß, U.7
-
3
-
-
68949141593
-
531 nm green lasing of InGaN based laser diodes on semi-polar {2021} free-standing GaN substrates
-
Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, and T. Nakamura, "531 nm green lasing of InGaN based laser diodes on semi-polar {2021} free-standing GaN substrates," Appl. Phys. Exp., vol. 2, pp. 082101-1-082101-3, 2009.
-
(2009)
Appl. Phys. Exp.
, vol.2
, pp. 0821011-0821013
-
-
Enya, Y.1
Yoshizumi, Y.2
Kyono, T.3
Akita, K.4
Ueno, M.5
Adachi, M.6
Sumitomo, T.7
Tokuyama, S.8
Ikegami, T.9
Katayama, K.10
Nakamura, T.11
-
4
-
-
67949092890
-
510-515 nm InGaN-based green laser diodes on c-plane GaN substrate
-
T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai, "510-515 nm InGaN-based green laser diodes on c-plane GaN substrate," Appl. Phys. Exp., vol. 2, pp. 062201-1-062201-3, 2009.
-
(2009)
Appl. Phys. Exp.
, vol.2
, pp. 0622011-0622013
-
-
Miyoshi, T.1
Masui, S.2
Okada, T.3
Yanamoto, T.4
Kozaki, T.5
Nagahama, S.6
Mukai, T.7
-
5
-
-
77954296372
-
True green InGaN laser diodes
-
S. Lutgen, A. Avramescu, T. Lermer, D. Queren, J. Müller, G. Bruederl, and U. Strauß, "True green InGaN laser diodes," Phys. Status Solidi (a), vol. 207, pp. 1318-1322, 2010.
-
(2010)
Phys. Status Solidi (a)
, vol.207
, pp. 1318-1322
-
-
Lutgen, S.1
Avramescu, A.2
Lermer, T.3
Queren, D.4
Müller, J.5
Bruederl, G.6
Strauß, U.7
-
6
-
-
70349105024
-
Continuous-wave operation of 520 nm green InGaN-based laser diodes on semi-polar {2021} GaN substrates
-
Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, "Continuous-wave operation of 520 nm green InGaN-based laser diodes on semi-polar {2021} GaN substrates," Appl. Phys. Exp., vol. 2, pp. 092101-1-092101-3, 2009.
-
(2009)
Appl. Phys. Exp.
, vol.2
, pp. 0921011-0921013
-
-
Yoshizumi, Y.1
Adachi, M.2
Enya, Y.3
Kyono, T.4
Tokuyama, S.5
Sumitomo, T.6
Akita, K.7
Ikegami, T.8
Ueno, M.9
Katayama, K.10
Nakamura, T.11
-
7
-
-
78650854012
-
Low threshold current density InGaN based 520-530 nm green laser diodes on semi-polar {20-21} free-standing GaN substrates
-
M. Adachi, Y. Yoshizumi, Y. Enya, T. Kyono, T. Sumitomo, S. Tokuyama, S. Takagi, K. Sumiyoshi, N. Saga, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, "Low threshold current density InGaN based 520-530 nm green laser diodes on semi-polar {20-21} free-standing GaN substrates," Appl. Phys. Exp., vol. 3, pp. 121001-1-121001-3, 2010.
-
(2010)
Appl. Phys. Exp.
, vol.3
, pp. 1210011-1210013
-
-
Adachi, M.1
Yoshizumi, Y.2
Enya, Y.3
Kyono, T.4
Sumitomo, T.5
Tokuyama, S.6
Takagi, S.7
Sumiyoshi, K.8
Saga, N.9
Ikegami, T.10
Ueno, M.11
Katayama, K.12
Nakamura, T.13
-
8
-
-
78549246170
-
High-efficiency blue and true-greenemitting laser diodes based on non-c-plane oriented GaN substrates
-
J. W. Raring, M. C. Schmidt, C. Poblenz, Y.-C. Chang, M. J. Mondry, B. Li, J. Iveland, B.Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High-efficiency blue and true-greenemitting laser diodes based on non-c-plane oriented GaN substrates," Appl. Phys. Exp., vol. 3, pp. 112101-1-112101-3, 2010.
-
(2010)
Appl. Phys. Exp.
, vol.3
, pp. 1121011-1121013
-
-
Raring, J.W.1
Schmidt, M.C.2
Poblenz, C.3
Chang, Y.-C.4
Mondry, M.J.5
Li, B.6
Iveland, J.7
Walters, B.8
Krames, M.R.9
Craig, R.10
Rudy, P.11
Speck, J.S.12
DenBaars, S.P.13
Nakamura, S.14
-
9
-
-
69249161823
-
InGaN laser diodes with 50 mW output power emitting at 515 nm
-
A. Avramescu, T. Lermer, J. Müller, S. Tautz, D. Queren, S. Lutgen, and U. Strauß, "InGaN laser diodes with 50 mW output power emitting at 515 nm," Appl. Phys. Lett., vol. 95, pp. 071103-1-071103-3, 2009.
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 0711031-0711033
-
-
Avramescu, A.1
Lermer, T.2
Müller, J.3
Tautz, S.4
Queren, D.5
Lutgen, S.6
Strauß, U.7
-
10
-
-
77955504348
-
High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes
-
Y.-D. Lin, S. Yamamoto, C.-Y. Huang, C.-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes," Appl. Phys. Exp., vol. 3, pp. 082001-1-082001-3, 2010.
-
(2010)
Appl. Phys. Exp.
, vol.3
, pp. 0820011-0820013
-
-
Lin, Y.-D.1
Yamamoto, S.2
Huang, C.-Y.3
Hsiung, C.-L.4
Wu, F.5
Fujito, K.6
Ohta, H.7
Speck, J.S.8
DenBaars, S.P.9
Nakamura, S.10
-
11
-
-
74849111497
-
AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm
-
A. Tyagi, R. M. Farrell, K. M. Kelchner, C.-Y. Huang, P. S. Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm," Appl. Phys. Exp., vol. 3, pp. 011002-1-011002-2, 2010.
-
(2010)
Appl. Phys. Exp.
, vol.3
, pp. 0110021-0110022
-
-
Tyagi, A.1
Farrell, R.M.2
Kelchner, K.M.3
Huang, C.-Y.4
Hsu, P.S.5
Haeger, D.A.6
Hardy, M.T.7
Holder, C.8
Fujito, K.9
Cohen, D.A.10
Ohta, H.11
Speck, J.S.12
DenBaars, S.P.13
Nakamura, S.14
-
12
-
-
33746833562
-
Straininduced polarization in wurtzite III-nitride semipolar layers
-
A. E. Romanov, T. J. Baker, S. Nakamura, and J. S. Speck, "Straininduced polarization in wurtzite III-nitride semipolar layers," J. Appl. Phys., vol. 100, pp. 023522-1-023522-10, 2006.
-
(2006)
J. Appl. Phys.
, vol.100
, pp. 0235221-02352210
-
-
Romanov, A.E.1
Baker, T.J.2
Nakamura, S.3
Speck, J.S.4
-
13
-
-
0001598226
-
Determination of piezoelectric fields in strained GaInN quantum wells using the quantumconfined Stark effect
-
T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, I. Akasaki, Y. Kaneko, S. Nakagawa, Y. Yamaoka, and N. Yamada, "Determination of piezoelectric fields in strained GaInN quantum wells using the quantumconfined Stark effect," Appl. Phys. Lett., vol. 73, pp. 1691-1-1691-3, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 16911-16913
-
-
Takeuchi, T.1
Wetzel, C.2
Yamaguchi, S.3
Sakai, H.4
Amano, H.5
Akasaki, I.6
Kaneko, Y.7
Nakagawa, S.8
Yamaoka, Y.9
Yamada, N.10
-
14
-
-
33745737191
-
Analytical model for the quantum-confined Stark effect including electric field screening by non-equilibrium carriers
-
DOI 10.1002/pssb.200565432
-
K. A. Bulashevich, S. Yu. Karpov, and R. A. Suris, "Analytical model for the quantum-confined Stark effect including electric field screening bynon-equilibrium carriers," Phys. Stat. Sol. (b), vol. 243, pp. 1625-1629, 2006. (Pubitemid 44013974)
-
(2006)
Physica Status Solidi (B) Basic Research
, vol.243
, Issue.7
, pp. 1625-1629
-
-
Bulashevich, K.A.1
Karpov, S.Yu.2
Suris, R.A.3
-
15
-
-
84941463951
-
On carrier injection and gain dynamics in quantum well lasers
-
Jun
-
N. Tessler and G. Eisenstein, "On carrier injection and gain dynamics in quantum well lasers," IEEE J. Quantum Electron., vol. 29, no. 6, pp. 1586-1594, Jun. 1993.
-
(1993)
IEEE J. Quantum Electron.
, vol.29
, Issue.6
, pp. 1586-1594
-
-
Tessler, N.1
Eisenstein, G.2
-
16
-
-
0033711192
-
Simulation and optimization of 420 nm InGaN/GaN laser diodes
-
J. Piprek, R. K. Sink, M. A. Hansen, J. E. Bowers, and S. P. DenBaars, "Simulation and optimization of 420 nm InGaN/GaN laser diodes," in SPIE Proc., 2000, pp. 3944-1-3944-12.
-
(2000)
SPIE Proc.
, pp. 39441-394412
-
-
Piprek, J.1
Sink, R.K.2
Hansen, M.A.3
Bowers, J.E.4
DenBaars, S.P.5
-
17
-
-
31744439317
-
Simulation of visible and ultra-violet group-III nitride light emitting diodes
-
DOI 10.1016/j.jcp.2005.08.011, PII S0021999105003785
-
K. A. Bulashevich, V. F. Mymrin, S. Yu. Karpov, I. A. Zhmakin, and A. I. Zhmakin, "Simulation of visible and ultra-violet group-III nitride light emitting diodes," J. Comput. Phys., vol. 213, pp. 214-238, 2006. (Pubitemid 43174873)
-
(2006)
Journal of Computational Physics
, vol.213
, Issue.1
, pp. 214-238
-
-
Bulashevich, K.A.1
Mymrin, V.F.2
Karpov, S.Yu.3
Zhmakin, I.A.4
Zhmakin, A.I.5
-
18
-
-
0035278820
-
Monte Carlo simulation of electron transport in the III-nitride Wurtzite phase materials system: Binaries and ternaries
-
DOI 10.1109/16.906448, PII S0018938301014654
-
M. Farahmand, C. Garetto, E. Bellotti, K. F. Brennan, M. Goano, E. Ghillino, G. Ghione, J. D. Albrecht, and P. P. Ruden, "Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: Binaries and ternaries," IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 535-542, Mar. 2001. (Pubitemid 32271171)
-
(2001)
IEEE Transactions on Electron Devices
, vol.48
, Issue.3
, pp. 535-542
-
-
Farahmand, M.1
Garetto, C.2
Bellotti, E.3
Brennan, K.F.4
Goano, M.5
Ghillino, E.6
Ghione, G.7
Albrecht, J.D.8
Ruden, P.P.9
-
19
-
-
78650923669
-
Impact of carrier transport on aquamarine-green laser performance
-
D. S. Sizov, R. Bhat, A. Zakharian, J. Napierala, K. Song, D. Allen, and C.-E. Zah, "Impact of carrier transport on aquamarine-green laser performance," Appl. Phys. Exp., vol. 3, pp. 122101-1-122101-3, 2010.
-
(2010)
Appl. Phys. Exp.
, vol.3
, pp. 1221011-1221013
-
-
Sizov, D.S.1
Bhat, R.2
Zakharian, A.3
Napierala, J.4
Song, K.5
Allen, D.6
Zah, C.-E.7
-
20
-
-
77955899577
-
Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them
-
X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, and A. Matulionis, "Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them," J. Appl. Phys., vol. 108, pp. 033112-1-033112-12, 2010.
-
(2010)
J. Appl. Phys.
, vol.108
, pp. 0331121-03311212
-
-
Ni, X.1
Li, X.2
Lee, J.3
Liu, S.4
Avrutin, V.5
Özgür, U.6
Morkoç, H.7
Matulionis, A.8
-
21
-
-
77957109223
-
Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model
-
W. W. Chow, M. H. Crawford, J. Y. Tsao, and M. Kneissl, "Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model," Appl. Phys. Lett., vol. 97, pp. 121105-1-121105-3, 2010.
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 1211051-1211053
-
-
Chow, W.W.1
Crawford, M.H.2
Tsao, J.Y.3
Kneissl, M.4
-
22
-
-
77954295374
-
Optical gain and gain saturation of blue-green InGaN quantum wells
-
D. S. Sizov, R. Bhat, J. Napierala, C. Gallinat, K. Song, D. Allen, and C.-E. Zah, "Optical gain and gain saturation of blue-green InGaN quantum wells," Phys. Status Sol. A, vol. 207, pp. 1309-1312, 2010.
-
(2010)
Phys. Status Sol. A
, vol.207
, pp. 1309-1312
-
-
Sizov, D.S.1
Bhat, R.2
Napierala, J.3
Gallinat, C.4
Song, K.5
Allen, D.6
Zah, C.-E.7
-
23
-
-
5544314341
-
Characteristics of InGaNmultiquantum-well-structure laser diodes
-
S. Nakamura, M. Senoh, S. I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, andY. Sugimoto, "Characteristics of InGaNmultiquantum-well-structure laser diodes," Appl. Phys. Lett., vol. 68, pp. 3269-3271, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.68
, pp. 3269-3271
-
-
Nakamura, S.1
Senoh, M.2
Nagahama, S.I.3
Iwasa, N.4
Yamada, T.5
Matsushita, T.6
Kiyoku, H.7
Sugimoto, Y.8
-
24
-
-
0035250486
-
Modeling of GaN optoelectronic devices and strain-induced piezoelectric effects
-
DOI 10.1109/3.903075
-
C. A. Flory and G. Hsnain, "Modeling of GaN optoelectronic devices and strain-induced piezoelectric effects," IEEE J. Quantum Electron., vol. 37, no. 2, pp. 244-253, Feb. 2001. (Pubitemid 32254582)
-
(2001)
IEEE Journal of Quantum Electronics
, vol.37
, Issue.2
, pp. 244-253
-
-
Flory, C.A.1
Hasnain, G.2
-
25
-
-
0025418806
-
Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface
-
DOI 10.1109/16.52447
-
K. Horio and H. Yanai, "Numerical modeling of heterojunctions including the thermionic emission mechanism at the heteroj unction interface," IEEE Trans. Eelectron. Devices, vol. 37, no. 37, pp. 1093-1098, Apr. 1990. (Pubitemid 20701466)
-
(1990)
IEEE Transactions on Electron Devices
, vol.37
, Issue.4
, pp. 1093-1098
-
-
Horio Kazushige1
Yanai Hisayoshi2
-
27
-
-
77950509633
-
Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells
-
M. F. Schubert and E. F. Schubert, "Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells," Appl. Phys. Lett., vol. 96, pp. 131102-1-131102-3, 2010.
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 1311021-1311023
-
-
Schubert, M.F.1
Schubert, E.F.2
-
28
-
-
0002930518
-
Theory of tunneling
-
E. O. Kane, "Theory of tunneling," J. Appl. Phys., vol. 32, pp. 83-91, 1961.
-
(1961)
J. Appl. Phys.
, vol.32
, pp. 83-91
-
-
Kane, E.O.1
-
31
-
-
77957887096
-
Gain anisotropy analysis in green semipolar InGaN quantum wells with inhomogeneous broadening
-
K. Kojima, A. A. Yamaguchi, M. Funato, Y. Kawakami, and S. Noda, "Gain anisotropy analysis in green semipolar InGaN quantum wells with inhomogeneous broadening," Jpn. J. Appl. Phys., vol. 49, pp. 081001-1-081001-4, 2010.
-
(2010)
Jpn. J. Appl. Phys.
, vol.49
, pp. 0810011-0810014
-
-
Kojima, K.1
Yamaguchi, A.A.2
Funato, M.3
Kawakami, Y.4
Noda, S.5
-
32
-
-
0344454222
-
Theory of well-width-dependent periodic variation in photoluminescence from AIGaAs/GaAs quantum wells
-
Y. Murayama, "Theory of well-width-dependent periodic variation in photoluminescence from AIGaAs/GaAs quantum wells," Phys. Rev. B, vol. 34, pp. 2500-2507, 1986.
-
(1986)
Phys. Rev. B
, vol.34
, pp. 2500-2507
-
-
Murayama, Y.1
-
33
-
-
0026869627
-
Quantum capture and escape in quantum-well lasers-implications on direct modulation bandwidth limitations
-
May
-
S. C. Kan, D. Vasslovski, T. C.Wu, and K. Y. Lau, "Quantum capture and escape in quantum-well lasers-implications on direct modulation bandwidth limitations," IEEE Photon. Technol. Lett., vol. 4, no. 5, pp. 428-431, May 1992.
-
(1992)
IEEE Photon. Technol. Lett.
, vol.4
, Issue.5
, pp. 428-431
-
-
Kan, S.C.1
Vasslovski, D.2
Wu, T.C.3
Lau, K.Y.4
-
34
-
-
0037416516
-
Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells
-
Ü. Özgür, H. O. Everitt, S. Keller, and S. P. DenBaars, "Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells," Appl. Phys. Lett., vol. 82, pp. 1416-1418, 2003.
-
(2003)
Appl. Phys. Lett.
, vol.82
, pp. 1416-1418
-
-
Özgür, U.1
Everitt, H.O.2
Keller, S.3
DenBaars, S.P.4
-
35
-
-
0001530584
-
Hot hole relaxation dynamics in p-GaN
-
H. Ye, G. W. Wicks, and P. M. Fauchet, "Hot hole relaxation dynamics in p-GaN," Appl. Phys. Lett., vol. 77, pp. 1185-1187, 2000.
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 1185-1187
-
-
Ye, H.1
Wicks, G.W.2
Fauchet, P.M.3
-
36
-
-
0000802845
-
Hot electron relaxation time in GaN
-
H. Ye, G. W. Wicks, and P. M. Fauchet, "Hot electron relaxation time in GaN," Appl. Phys. Lett., vol. 74, pp. 711-713, 1999. (Pubitemid 129615157)
-
(1999)
Applied Physics Letters
, vol.74
, Issue.5
, pp. 711-713
-
-
Ye, H.1
Wicks, G.W.2
Fauchet, P.M.3
-
37
-
-
0344454222
-
Theory of well-width-dependent periodic variation in photoluminescence from AIGaAs/GaAs quantum wells
-
Y. Murayama, "Theory of well-width-dependent periodic variation in photoluminescence from AIGaAs/GaAs quantum wells," Phys. Rev. B, vol. 34, pp. 2500-2507, 1986.
-
(1986)
Phys. Rev. B
, vol.34
, pp. 2500-2507
-
-
Murayama, Y.1
-
39
-
-
78650662289
-
Study of tunneling transport of carriers in structures with an InGaN/GaN active region
-
V. S. Sizov,V.V. Neploh, A. F. Tsatsulnikov, A.V. Sakharov,W.V. Lundin, E. E. Zavarin, A. E. Nikolaev, A. M. Mintairov, and J. L. Merz, "Study of tunneling transport of carriers in structures with an InGaN/GaN active region," Semiconductors, vol. 44, no. 12, pp. 1567-1575, 2010.
-
(2010)
Semiconductors
, vol.44
, Issue.12
, pp. 1567-1575
-
-
Sizov, V.S.1
Neploh, V.V.2
Tsatsulnikov, A.F.3
Sakharov, A.V.4
Lundin, W.V.5
Zavarin, E.E.6
Nikolaev, A.E.7
Mintairov, A.M.8
Merz, J.L.9
-
40
-
-
61349147058
-
On resonant optical excitation and carrier escape inGaInN/GaN quantum wells
-
M. F. Schubert, J. Xu, Q. Dai, F. W. Mont, J. K. Kim, and E. F. Schubert, "On resonant optical excitation and carrier escape inGaInN/GaN quantum wells," Appl. Phys. Lett., vol. 94, pp. 081114-1-081114-2, 2009.
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 0811141-0811142
-
-
Schubert, M.F.1
Xu, J.2
Dai, Q.3
Mont, F.W.4
Kim, J.K.5
Schubert, E.F.6
-
41
-
-
0002775069
-
P-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg
-
M. Rubin, N. Newman, J. S. Chan, T. C. Fu, and J. T. Ross, "P-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg," Appl. Phys. Lett., vol. 64, pp. 64-66, 1994.
-
(1994)
Appl. Phys. Lett.
, vol.64
, pp. 64-66
-
-
Rubin, M.1
Newman, N.2
Chan, J.S.3
Fu, T.C.4
Ross, J.T.5
-
42
-
-
0032614027
-
Low field electron mobility in GaN
-
S. Dhar and S. Ghosh, "Low field electron mobility in GaN," J. Appl. Phys., vol. 86, pp. 2668-2676, 1999. (Pubitemid 129308601)
-
(1999)
Journal of Applied Physics
, vol.86
, Issue.5
, pp. 2668-2676
-
-
Dhar, S.1
Ghosh, S.2
-
43
-
-
0020921227
-
An analytic model for theMIS tunnel junction
-
N. G. Tarr, D. L. Pulfrey, and D. S. Camporese, "An analytic model for theMIS tunnel junction," IEEE Trans. Eelectron. Devices, vol. 30, no. 12, pp. 1760-1770, Dec. 1983. (Pubitemid 15461408)
-
(1983)
IEEE Transactions on Electron Devices
, vol.ED-30
, Issue.12
, pp. 1760-1770
-
-
Tarr, N.G.1
Pulfrey, D.L.2
Camporese, D.S.3
-
44
-
-
0031698477
-
Simulation of carrier transport and nonlinearities in quantum-well laser diodes
-
PII S0018919798003571
-
M. Grupen and K. Hess, "Simulation of carrier transport and nonlinearities in quantum-well laser diodes," IEEE J. Quantum Electron., vol. 34, no. 1, pp. 120-140, Jan. 1998. (Pubitemid 128610720)
-
(1998)
IEEE Journal of Quantum Electronics
, vol.34
, Issue.1
, pp. 120-140
-
-
Grupen, M.1
Hess, K.2
-
45
-
-
46649103454
-
On the importance of radiative and Auger losses in GaNbased quantum wells
-
J. Hader, J. V. Moloney, B. Pasenow, S.W. Koch, M. Sabathil, N. Linder, and S. Lutgen, "On the importance of radiative and Auger losses in GaNbased quantum wells," Appl. Phys. Lett., vol. 92, pp. 261103-1-261103-3, 2008.
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 2611031-2611033
-
-
Hader, J.1
Moloney, J.V.2
Pasenow, B.3
Koch, S.W.4
Sabathil, M.5
Linder, N.6
Lutgen, S.7
-
46
-
-
0036508940
-
Phosphor free high-luminous-efficiency white light-emitting diodes composed of InGaN multi-quantum well
-
M. Yamada, Y. Narukawa, and T. Mukai, "Phosphor free high-luminous efficiency white light-emitting diodes composed of InGaN multi-quantum well," Jpn. J. Appl. Phys., vol. 41, pp. L246-L248, 2002. (Pubitemid 34750353)
-
(2002)
Japanese Journal of Applied Physics, Part 2: Letters
, vol.41
, Issue.3 A
-
-
Yamada, M.1
Narukawa, Y.2
Mukai, T.3
-
47
-
-
78650869241
-
Internal optical waveguide loss and p-Type absorption in blue and green InGaN quantum well laser diodes
-
D. S. Sizov, R. Bhat, A. Heberle, K. Song, and C.-E. Zah, "Internal optical waveguide loss and p-Type absorption in blue and green InGaN quantum well laser diodes," Appl. Phys. Exp., vol. 3, pp. 122104-1-122104-3, 2010.
-
(2010)
Appl. Phys. Exp.
, vol.3
, pp. 1221041-1221043
-
-
Sizov, D.S.1
Bhat, R.2
Heberle, A.3
Song, K.4
Zah, C.-E.5
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