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Volumn 207, Issue 6, 2010, Pages 1318-1322
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True green InGaN laser diodes
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Author keywords
Beam characteristics; Carrier recombination; Defects; Efficiency; Electroluminescence; InGaN; Laser
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Indexed keywords
BEAM CHARACTERISTICS;
CARRIER LIFETIME MEASUREMENTS;
CARRIER RECOMBINATION;
CW OPERATION;
DEFECT REDUCTION;
FAR FIELD;
GAN SUBSTRATE;
GROWTH CONDITIONS;
INGAN LASER DIODES;
INGAN QUANTUM WELLS;
INTERNAL LOSS;
KEY PARAMETERS;
LASER OPERATIONS;
LASER THRESHOLD;
OPTICAL OUTPUT POWER;
PULSE OPERATION;
QUANTUM WELL;
RECOMBINATION PROCESS;
RIDGE WAVEGUIDE LASERS;
ROOM TEMPERATURE;
SLOPE EFFICIENCIES;
WALLPLUG EFFICIENCY;
WAVEGUIDE SIMULATION;
CARRIER LIFETIME;
DEFECTS;
ELECTROLUMINESCENCE;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
PULSED LASER APPLICATIONS;
SEMICONDUCTOR QUANTUM WELLS;
SUBSTRATES;
WAVEGUIDES;
QUANTUM WELL LASERS;
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EID: 77954296372
PISSN: 18626300
EISSN: 18626319
Source Type: Journal
DOI: 10.1002/pssa.200983620 Document Type: Article |
Times cited : (46)
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References (10)
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