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Volumn 207, Issue 6, 2010, Pages 1318-1322

True green InGaN laser diodes

Author keywords

Beam characteristics; Carrier recombination; Defects; Efficiency; Electroluminescence; InGaN; Laser

Indexed keywords

BEAM CHARACTERISTICS; CARRIER LIFETIME MEASUREMENTS; CARRIER RECOMBINATION; CW OPERATION; DEFECT REDUCTION; FAR FIELD; GAN SUBSTRATE; GROWTH CONDITIONS; INGAN LASER DIODES; INGAN QUANTUM WELLS; INTERNAL LOSS; KEY PARAMETERS; LASER OPERATIONS; LASER THRESHOLD; OPTICAL OUTPUT POWER; PULSE OPERATION; QUANTUM WELL; RECOMBINATION PROCESS; RIDGE WAVEGUIDE LASERS; ROOM TEMPERATURE; SLOPE EFFICIENCIES; WALLPLUG EFFICIENCY; WAVEGUIDE SIMULATION;

EID: 77954296372     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983620     Document Type: Article
Times cited : (46)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.