Blue laser diodes including lattice-matched Al0.83In 0.17N bottom cladding layer

Electronics Letters

Volumn 44, Issue 8, 2008, Pages 521-522

  Castiglia, A ^a   Feltin, E ^a   Dorsaz, J ^a   Cosendey, G ^a   Carlin, J F ^a   Butte R ^a   Grandjean, N ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GALLIUM NITRIDE; LASER CLADDING; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

GAIN-GUIDED DEVICES; OPTICAL CONFINEMENT; PULSED CURRENT INJECTION; ROOM TEMPERATURE;

SEMICONDUCTOR LASERS;

EID: 42149091101     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20080495     Document Type: Article

References (7)

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3. Nakamura, S.: ' III-V nitride based light-emitting devices ', Solid State Commun., 1997, 102, p. 237-243 10.1016/S0038-1098(96)00722-3 0038-1098
4. Sitar, Z.: et al. ' Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy ', J. Vac. Sci. Technol. B, 1990, 8, p. 316-322 10.1116/1.585061
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6. Carlin, J.F.: et al. ' Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials ', Phys. Status Solidi B, 2005, 242, p. 2326-2344 10.1002/pssb.200560968 0370-1972
7. Coldren, L.A., and Corzine, S.W.: ' Diode lasers and photonic integrated circuits ', (Wiley Interscience, USA, 1995), p. 45