Recent results of blue and green InGaN laser diodes for laser projection

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7953, Issue , 2011, Pages

  Lutgen, Stephan ^a   Dini, Dimitri ^a   Pietzonka, Ines ^a   Tautz, Soenke ^a   Breidenassel, Andreas ^a   Lell, Alfred ^a   Avramescu, Adrian ^a   Eichler, Christoph ^a   Lermer, Teresa ^a   Müller, Jens ^a   Bruederl, Georg ^a   Gomez, Alvaro ^a   Strauss, Uwe ^a   Scheibenzuber, Wolfgang G ^b   Schwarz, Ulrich T ^b   Pasenow, Bernhard ^c   Koch, Stephan ^c  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

GaN; RWG laser; Semiconductor laser

Indexed keywords

ALLOY FLUCTUATION; BLUE AND GREEN LASER; BLUE LASER DIODES; DEGRADATION TEST; DIRECT GREEN; ELECTRO-OPTICAL MEASUREMENTS; GAIN CURVE; GAIN SPECTRA; GAN; GREEN LASER; HIGH SLOPE EFFICIENCY; INGAN LASER DIODES; INHOMOGENEOUS BROADENING; KEY PARAMETERS; LASER PROJECTION; LASER THRESHOLD; LIFE-TIMES; LOW DEFECT DENSITIES; LOW OPERATING VOLTAGE; MATERIAL QUALITY; MATERIAL SYSTEMS; MICROSCOPIC THEORY; MOBILE APPLICATIONS; MODE OPERATION; MW OUTPUT; NONRADIATIVE DEFECTS; OPTICAL OUTPUT POWER; OUTPUT POWER; OUTPUT POWER LEVELS; OVERSTRESSES; PHONON COUPLING; POTENTIAL FLUCTUATIONS; POWER LEVELS; QUANTUM WELL; RECOMBINATION PROCESS; RWG LASER; TECHNOLOGICAL CHALLENGES; TEMPERATURE RANGE; TIME-RESOLVED PHOTOLUMINESCENCE; WALLPLUG EFFICIENCY;

DEFECTS; GALLIUM NITRIDE; LASER THEORY; LASERS; LIQUID LASERS; OPTICAL DATA PROCESSING; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL LASERS;

EID: 79953125633     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.874757     Document Type: Conference Paper

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