Microscopic analysis of optical gain in InGaN/GaN quantum wells

Applied Physics Letters

Volumn 88, Issue 2, 2006, Pages 1-3

  Witzigmann, B ^a   Laino, V ^a   Luisier, M ^a   Schwarz, U T ^b   Feicht, G ^b   Wegscheider, W ^b   Engl, K ^c   Furitsch, M ^c   Leber, A ^c   Lell, A ^c   Harle V ^c  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF REGENSBURG   (Germany)

^c OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HAKKI-PAOLI MEASUREMENTS; INGAN/GAN QUANTUM WELLS; MICROSCOPIC ANALYSIS; OPTICAL GAIN;

ELECTRIC FIELDS; MICROSCOPIC EXAMINATION; OPTICAL PROPERTIES; PIEZOELECTRICITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 30744450216     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2164907     Document Type: Article

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