Behaviors of emission wavelength shift in AlInGaN-based green laser diodes

IEEE Electron Device Letters

Volumn 29, Issue 8, 2008, Pages 870-872

  Lee, Sung Nam ^a   Ryu, H Y ^b   Paek, H S ^a   Son, J K ^a   Sung, Y J ^a   Kim, K S ^a   Kim, H K ^a   Kim, H ^a   Jang, T ^a   Ha, K H ^c   Nam, O H ^d   Park, Y ^a  

^a Samsung Electro Mechanics   (South Korea)

^b Inha University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d Korea Polytechnic University   (South Korea)

Author keywords

Gallium compounds; GaN; Laser diode (LD); Light emitting diodes (LEDs); Quantum well (QW); Semiconductor lasers

Indexed keywords

LADDER NETWORKS; LASERS; PULSED LASER DEPOSITION; SEMICONDUCTOR QUANTUM WIRES;

ALINGAN; BLUE SHIFTING; EMISSION PEAKING; EMISSION WAVE LENGTH; GREEN LASERS; HEATING EFFECTS; INJECTION CURRENTS; LASING WAVELENGTHS; PIEZO-ELECTRIC FIELDS; PULSE WIDTH (PW); QUANTUM WELLS; THRESHOLD CURRENTS;

INJECTION (OIL WELLS);

EID: 48749092148     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2001081     Document Type: Article

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