InGaN-based blue laser diodes

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 3, 1997, Pages 712-718

  Nakamura, Shuji ^a,b,c  

^a NICHIA CORPORATION   (Japan)

^b UNIVERSITY OF TOKUSHIMA   (Japan)

^c UNIVERSITY OF FLORIDA   (United States)

Author keywords

Blue laser; InGaN; Localization; MQW

Indexed keywords

CARRIER CONCENTRATION; CONTINUOUS WAVE LASERS; CURRENT DENSITY; ELECTRON ENERGY LEVELS; LIGHT ABSORPTION; LIGHT EMISSION; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

BLUE LASER DIODES; SEMICONDUCTING INDIUM GALLIUM NITRIDE; STOKES SHIFT;

QUANTUM WELL LASERS;

EID: 0031152997     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.640626     Document Type: Article

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