GaN and InGaN (1122) surfaces: Group-III adlayers and indium incorporation

Applied Physics Letters

Volumn 95, Issue 13, 2009, Pages

  Northrup, John E ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADLAYERS; FIRST-PRINCIPLES CALCULATION; REPULSIVE INTERACTIONS;

GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; SEMICONDUCTING GALLIUM;

ATOMS;

EID: 70349662188     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3240401     Document Type: Article

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