Lattice tilt and misfit dislocations in (112̄2) semipolar GaN heteroepitaxy

Applied Physics Express

Volumn 3, Issue 1, 2010, Pages

  Young, Erin C ^a   Wu, Feng ^a   Romanov, Alexey E ^a,b   Tyagi, Anurag ^a   Gallinat, Chad S ^a   DenBaars, Steven P ^a   Nakamura, Shuji ^a   Speck, James S ^a  

^a Santa Barbara   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; BASAL PLANES; DISLOCATION DENSITIES; DISLOCATION LINES; GAN SUBSTRATE; HETEROEPITAXIAL; HETEROEPITAXY; IN-PLANE; IN-PLANE DIRECTION; INTERFACIAL MISFIT DISLOCATIONS; LATTICE TILTS; MISFIT DISLOCATIONS; MISFIT STRAINS; SEMIPOLAR; TEM;

EPILAYERS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

BURGERS VECTOR;

EID: 74849135215     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.011004     Document Type: Article

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