545nm room-temperature continuous-wave operation of BeZnCdSe quantum-well green laser diodes with low threshold current density

Applied Physics Express

Volumn 3, Issue 9, 2010, Pages

  Kasai, Jun Ichi ^a   Akimoto, Ryouichi ^a   Kuwatsuka, Haruhiko ^a   Hasama, Toshifumi ^a   Ishikawa, Hiroshi ^a   Fujisaki, Sumiko ^b   Kikawa, Takeshi ^b   Tanaka, Sigehisa ^b   Tsuji, Shinji ^b   Nakajima, Hiroshi ^c   Tasai, Kunihiko ^c   Takiguchi, Yoshiro ^c   Asatsuma, Tsunenori ^c   Tamamura, Koshi ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b HITACHI LTD   (Japan)

^c SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING LAYER; CONTINUOUS WAVE LASING; CONTINUOUS WAVE OPERATION; GREEN LASER; INGAN/GAN; LOW THRESHOLD CURRENT DENSITY; QUANTUM WELL; ROOM TEMPERATURE; SHORT-PERIOD SUPERLATTICES; SPECTRAL REGION;

SEMICONDUCTOR QUANTUM WELLS; THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 77956722885     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.091201     Document Type: Article

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