Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (11 2̄2) GaN free standing substrates

Applied Physics Letters

Volumn 95, Issue 25, 2009, Pages

  Tyagi, Anurag ^a   Wu, Feng ^a   Young, Erin C ^a   Chakraborty, Arpan ^a   Ohta, Hiroaki ^a   Bhat, Rajaram ^b   Fujito, Kenji ^c   Denbaars, Steven P ^a   Nakamura, Shuji ^a   Speck, James S ^a  

^a University of California   (United States)

^b Corning Inc ^*  (United States)

^c MITSUBISHI CHEMICAL CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-SECTION TRANSMISSION; DISLOCATION GLIDE; FREE STANDING SUBSTRATES; GAN EPITAXIAL LAYERS; GAN LAYERS; GAN SUBSTRATE; HETERO-INTERFACES; HIGH RESOLUTION X RAY DIFFRACTION; MISFIT DISLOCATIONS; MISFIT STRAIN RELAXATION; PLASTIC RELAXATION; SEMIPOLAR; SLIP PLANE;

ALUMINUM; ELECTRON MICROSCOPES; GALLIUM NITRIDE; STRAIN CONTROL; STRAIN RELAXATION; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 73449123762     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3275717     Document Type: Article

References (18)

1. H. Ohta and K. Okamoto, Mater. Res. Bull. 0025-5408 34, 324 (2009).
2. K. Okamoto, J. Kashiwagi, T. Tanaka, and M. Kubota, Appl. Phys. Lett. 0003-6951 94, 071105 (2009). 10.1063/1.3078818
3. Y. D. Lin, M. T. Hardy, P. S. Hsu, K. M. Kelchner, C. Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, Appl. Phys. Express 1882-0778 2, 082102 (2009). 10.1143/APEX.2.082102
4. H. Sato, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. 0003-6951 92, 221110 (2008). 10.1063/1.2938062
5. A. Tyagi, Y. D. Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, Appl. Phys. Express 1882-0778 1, 091103 (2008). 10.1143/APEX.1.091103
6. D. S. Sizov, R. Bhat, J. Napierala, C. Gallinat, K. Song, and C. -E. Zah, Appl. Phys. Express 1882-0778 2, 071001 (2009). 10.1143/APEX.2.071001
7. Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, Appl. Phys. Express 1882-0778 2, 092101 (2009). 10.1143/APEX.2.092101
8. K. S. Kim, J. K. Son, S. N. Lee, Y. J. Sung, H. S. Paek, H. K. Kim, M. Y. Kim, K. H. Ha, H. Y. Ryu, O. H. Nam, T. Jang, and Y. J. Park, Appl. Phys. Lett. 0003-6951 92, 101103 (2008). 10.1063/1.2892634
9. J. S. Speck and S. F. Chichibu, Mater. Res. Bull. 0025-5408 34, 304 (2009).
10. H. Sato, H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, J. Light Visual Environ. 0387-8805 32, 107 (2008). 10.2150/jlve.32.107
11. J. Y. Tsao, Materials Fundamentals of Molecular Beam Epitaxy (Academic, New York, 1993).
12. L. B. Freund, Mater. Res. Bull. 0025-5408 17, 52 (1992).
13. D. Hull and D. J. Bacon, Introduction to Dislocations, 3rd ed. (Pergamon, Oxford, 1989).
14. R. Hull and J. C. Bean, Appl. Phys. Lett. 0003-6951 54, 925 (1989). 10.1063/1.100810
15. M. Bonar, R. Hull, J. F. Walker, and R. Malik, Appl. Phys. Lett. 0003-6951 60, 1327 (1992). 10.1063/1.107332
16. A. M. Andrews, R. LeSar, M. A. Kerner, J. S. Speck, A. E. Romanov, A. L. Kolesnikova, M. Bobeth, and W. Pompe, J. Appl. Phys. 0021-8979 95, 6032 (2004). 10.1063/1.1707208
17. K. H. Chang, R. Gibala, D. J. Srolovitz, P. K. Bhattacharya, and J. F. Mansfield, J. Appl. Phys. 0021-8979 67, 4093 (1990). 10.1063/1.344968
18. A. E. Romanov, P. Waltereit, and J. S. Speck, J. Appl. Phys. 0021-8979 97, 043708 (2005). 10.1063/1.1851016 (Pubitemid 40238291)